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| 2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25C. Tj Tstg 1 2SD669 180 120 5 1.5 3 1 20 150 -55 to +150 2SD669A 180 160 5 1.5 3 1 20 150 -55 to +150 Unit V V V A A W W C C 2 2SD669, 2SD669A Electrical Characteristics (Ta = 25C) 2SD669 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SD669A Max -- -- -- 10 320 -- 1 1.5 -- -- Min 180 160 5 -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- 140 14 Max -- -- -- 10 200 -- 1 1.5 -- -- V V MHz pF Unit V V V A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz Min 180 120 5 -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- 140 14 DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows. 2. Pulse test. B 2SD669 2SD669A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 -- Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 3 Collector current IC (A) Area of Safe Operation (13.3 V, 1.5 A) 1.0 (40 V, 0.5 A) 0.3 0.1 0.03 2SD669 0.01 DC Operation(TC = 25C) (120 V, 0.04 A) (160 V, 0.02A) 2SD669A 20 10 0 50 100 Case temperature TC (C) 150 1 3 10 30 100 300 Collector to emitter voltage VCE (V) 3 2SD669, 2SD669A Typical Output Characteristecs 1.0 50 5. 5.4.5 .0 4 3.5 3.0 2.5 Typical Transfer Characteristics 500 Collector current IC (mA) VCE = 5 V Collector current IC (A) 0.8 0.6 TC = 25C 200 100 P C = 20 2.0 Ta = 75C W 50 20 10 5 2 1.5 0.4 1.0 0.2 0.5 mA IB = 0 1 0 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) 0 10 20 30 40 50 Collector to emitter voltage VCE (V) 300 DC current transfer ratio hFE 250 200 150 100 50 1 1 3 10 100 300 1,000 3,000 30 Collector current IC (mA) VCE = 5 V 75C Ta = Collector to emitter saturation voltage VCE(sat) (V) DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC = 10 IB 1.0 0.8 0.6 =7 25 -25 25 -25 0.4 0.2 0 1 3 10 30 100 300 Collector current IC (mA) 4 -2 25 5 T C 5 C 1,000 2SD669, 2SD669A Base to Emitter Saturation Voltage vs. Collector Current Base to emitter saturation voltage VBE(sat) (V) 1.2 Gain bandwidth product fT (MHz) IC = 10 IB 1.0 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 Collector current IC (mA) 1,000 25C TC = - 25 75 Gain Bandwidth Product vs. Collector Current 240 200 160 120 80 40 0 10 VCE = 5 V Ta = 25C 30 100 300 Collector current IC (mA) 1,000 Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) 200 100 50 f = 1 MHz IE = 0 20 10 5 2 1 10 2 5 20 50 100 Collector to base voltage VCB (V) 5 Unit: mm 8.0 0.5 0 12 3.1 +0.15 -0.1 3.7 0.7 11.0 0.5 2.7 0.4 12 0 2.3 0.3 120 1.1 15.6 0.5 0.8 2.29 0.5 2.29 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod -- -- 0.67 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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